HFS2N60S Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 600V N-Channel MOSFET

Nov 2007
HFS2N60S
600V N-Channel MOSFET
BV_DSS = 600 V
R_{DS(on) typ} = 4.2 Ω
I_D = 2.0 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 6.0 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower R_DS(ON) : 4.2 Ω (Typ.) @V_GS=10V
‰ 100% Avalanche Tested
TO-220F
123
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25℃)
– Continuous (T_C = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
P_D
Power Dissipation (T_C = 25℃)
- Derate above 25℃
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
600
2.0*
1.35*
8.0*
±30
120
2.0
5.4
4.5
23
0.18
-55 to +150
300
Symbol
R_θJC
R_θJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
5.5
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
◎ SEMIHOW REV.A0,Nov 2007