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HFS2N60FS Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 600V N-Channel MOSFET | |||
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July 2015
HFS2N60FS
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ È
ID = 2 A
FEATURES
TO-220F
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 6.5 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) : È(Typ.) @VGS=10V
 100% Avalanche Tested
 Single Gauge Package
12
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25à
)
â Continuous (TC = 100à
)
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25à
)
- Derate above 25à
600
2*
1.3 *
8*
Ï30
110
2
2.3
23
0.18
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
W
W/à
à
à
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
RÈJC
RÈJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
5.5
62.5
Units
à
/W
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