HFS10N80 Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

Dec 2010
HFS10N80
800V N-Channel MOSFET
BV_DSS = 800 V
R_{DS(on) typ} = 0.92 ȍ
I_D = 9.4 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 58 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower R_DS(ON) : 0.92 ȍ (Typ.) @V_GS=10V
‰ 100% Avalanche Tested
TO-220F
123
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25ఁ͚
– Continuous (T_C = 100ఁ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
800
9.4*
5.9*
36.0*
ρͤ͡
920
9.4
6.5
4.5
P_D
Power Dissipation (T_C = 25ఁ͚
͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
65
0.52
-55 to +150
300
Thermal Resistance Characteristics
Symbol
R_șJC
R_șJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
1.93
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/ఁ
ఁ
ఁ
Units
ఁ͠Έ
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔΖΞΓΖΣ͑ͣ͢͡͡