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HFP9N80 Datasheet, PDF (1/9 Pages) SemiHow Co.,Ltd. – 800V N-Channel MOSFET | |||
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Oct 2016
HFP9N80 / HFS9N80
800V N-Channel MOSFET
Features
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 100% Avalanche Tested
 RoHS Compliant
Key Parameters
Parameter
BVDSS
ID
RDS(on), Typ
Qg, Typ
Value
800
9
1.2
48
Unit
V
A
È
nC
HFP9N80
TO-220
HFS9N80
TO-220F
Symbol
S
D
G
S
D
G
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
TO-220
TO-220F
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25à
)
â Continuous (TC = 100à
)
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
800
9.0
9.0 *
5.7
5.7 *
36
36 *
Ï30
860
9.0
17.8
4.5
PD
Power Dissipation (TC = 25à
)
- Derate above 25à
178
59
1.42
0.48
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
-55 to +150
300
* Drain current limited by maximum junction temperature
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/à
à
à
Thermal Resistance Characteristics
Symbol
RÈJC
RÈCS
RÈJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
TO-220
0.7
0.5
62.5
TO-220F
2.1
--
62.5
Unit
à
/W
à
/W
à
/W
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