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HFP8N65U Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology | |||
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HFP8N65U
650V N-Channel MOSFET
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 22.0 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) È7\S#9GS=10V
 100% Avalanche Tested
March 2013
BVDSS = 650 V
RDS(on) typ È
ID = 7.5 A
TO-220
1
23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25à
)
â Continuous (TC = 100à
)
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650
7.5
4.7
30
Ï30
280
7.5
15.0
4.5
PD
Power Dissipation (TC = 25à
)
- Derate above 25à
150
1.2
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RÈJC
RÈCS
RÈJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.82
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/à
à
à
Units
à
/W
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