HFP840 Datasheet, PDF (1/8 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel Enhancement Mode Field Effect Transistor

Sep 2011
HFP840
500V N-Channel MOSFET
BV_DSS = 500 V
R_{DS(on) typ} ȍ
I_D = 9.0 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 25 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower R_DS(ON) ȍ7\S#9_GS=10V
‰ 100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25ఁ͚͑
– Continuous (T_C = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
9.0
5.4
36
ρͤ͑͡
360
9.0
13.5
4.5
P_D
T_J, T_STG
T_L
Power Dissipation (T_C = 25ఁ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
135
1.07
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/ఁ͑
ఁ͑
ఁ͑
Thermal Resistance Characteristics
Symbol
R_șJC
R_șCS
R_șJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.93
--
62.5
Units
ఁ͠Έ͑
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