HFP730 Datasheet, PDF (1/8 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel Enhancement Mode Field Effect Transistor

June 2005
HFP730
400V N-Channel MOSFET
BV_DSS = 400 V
R_{DS(on) typ} = 0.8 Ω
I_D = 5.5 A
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 18 nC (Typ.)
 Extended Safe Operating Area
 Lower R_DS(ON) : 0.8 Ω (Typ.) @V_GS=10V
 100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
Drain-Source Voltage
400
I_D
Drain Current
– Continuous (T_C = 25℃)
5.5
Drain Current
– Continuous (T_C = 100℃)
3.5
I_DM
Drain Current
– Pulsed
(Note 1)
22
V_GS
Gate-Source Voltage
±30
E_AS
Single Pulsed Avalanche Energy
(Note 2)
330
I_AR
Avalanche Current
(Note 1)
5.5
E_AR
Repetitive Avalanche Energy
(Note 1)
7.3
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
P_D
T_J, T_STG
T_L
Power Dissipation (T_C = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
73
0.58
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.71
--
62.5
Units
℃/W
◎ SEMIHOW REV.A0,June 2005