HFP640G Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

Feb 2015
HFP640G
200V N-Channel MOSFET
BV_DSS = 200 V
R_{DS(on) typ} ȍ
I_D = 18 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 29 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower R_DS(ON) ȍ7\S#9_GS=10V
‰ 100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
P_D
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (T_C = 25୅)
- Derate above 25୅
200
18
11.4
72
ρ30
780
18
9.6
96
0.77
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
W
W/୅
୅
୅
Thermal Resistance Characteristics
Symbol
R_șJC
R_șCS
R_șJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.3
--
62.5
Units
୅/W
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