HFP640 Datasheet, PDF (1/8 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel Enhancement Mode Field Effect Transistor

July 2005
HFP640
200V N-Channel MOSFET
BV_DSS = 200 V
R_{DS(on) typ} = 0.145Ω
I_D = 18 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 37 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower R_DS(ON) : 0.145 Ω (Typ.) @V_GS=10V
‰ 100% Avalanche Tested
TO-220
1
23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Drain-Source Voltage
Drain Current
Drain Current
– Continuous (T_C = 25℃)
– Continuous (T_C = 100℃)
Drain Current
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_C = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
200
18
11.4
72
±30
250
18
13.9
5.5
139
1.11
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.9
--
62.5
Units
℃/W
◎ SEMIHOW REV.A0,July 2005