HFP630A_16 Datasheet, PDF (1/9 Pages) SemiHow Co.,Ltd. – 200V N-Channel MOSFET

Oct 2016
HFP630A / HFS630A
200V N-Channel MOSFET
Features
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ 100% Avalanche Tested
‰ RoHS Compliant
Key Parameters
Parameter
BV_DSS
I_D
R_{DS(on), Typ}
Qg_{, Typ}
Value
200
9.0
0.34
12
Unit
V
A
ȍ
nC
HFP630A
TO-220
HFS630A
TO-220F
Symbol
S
D
G
S
D
G
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
TO-220
TO-220F
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
P_D
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (T_C = 25୅)
- Derate above 25୅
200
9.0
9.0 *
5.7
5.7 *
36
36 *
ρ30
232
9
6
60
30
0.48
0.23
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
* Drain current limited by maximum junction temperature
Unit
V
A
A
A
V
mJ
A
mJ
W
W/୅
୅
୅
Thermal Resistance Characteristics
Symbol
R_șJC
R_șCS
R_șJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
TO-220
2.1
0.5
62.5
TO-220F
4.16
--
62.5
Unit
୅/W
୅/W
୅/W
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