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HFP50N06 Datasheet, PDF (1/8 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel MOSFET | |||
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July 2005
HFP50N06
60V N-Channel MOSFET
BVDSS = 60 V
RDS(on) = 18 mΩ
ID = 50 A
FEATURES
ï± Originative New Design
ï± Superior Avalanche Rugged Technology
ï± Robust Gate Oxide Technology
ï± Very Low Intrinsic Capacitances
ï± Excellent Switching Characteristics
ï± Unrivalled Gate Charge : 40 nC (Typ.)
ï± Extended Safe Operating Area
ï± Lower RDS(ON) : 0.018 Ω (Typ.) @VGS=10V
ï± 100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25â unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25â)
â Continuous (TC = 100â)
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
60
50
35.4
200
±25
490
50
12
7.0
PD
TJ, TSTG
TL
Power Dissipation (TC = 25â)
- Derate above 25â
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
120
0.8
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/â
â
â
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.24
--
62.5
Units
â/W
â SEMIHOW REV.A0,July 2005
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