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HFP4N90 Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology | |||
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March 2014
HFP4N90
900V N-Channel MOSFET
BVDSS = 900 V
RDS(on) typ È
ID = 4.0 A
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 30 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) È7\S#9GS=10V
 100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source Voltage
900
ID
Drain Current
â Continuous (TC = 25à°ÍÍ
4.0
Drain Current
â Continuous (TC = 100à°ÍÍ
2.3
IDM
Drain Current
â Pulsed
(Note 1)
16
VGS
Gate-Source Voltage
Ï30
EAS
Single Pulsed Avalanche Energy
(Note 2)
570
IAR
Avalanche Current
(Note 1)
4.0
EAR
Repetitive Avalanche Energy
(Note 1)
14
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25à°ÍÍ
ÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍ͵ÎΣÎÎ¥ÎÍÎÎΠΧÎÍͣͦà°Í
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
140
1.12
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/à°Í
à°Í
à°Í
Thermal Resistance Characteristics
Symbol
RÈJC
RÈCS
RÈJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.89
--
62.5
Units
à°Í ÎÍ
à°ÍÎͶ;ͺ͹ÎÎÍÎͶÎÍͲ͡ÍÍ;ÎΣÎÎÍͣͥ͢͡Í
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