HFP4N65F Datasheet, PDF (1/9 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET

Oct 2016
HFP4N65F / HFS4N65F
650V N-Channel MOSFET
Features
‰ Originative New Design
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ 100% Avalanche Tested
‰ RoHS Compliant
Key Parameters
Parameter
BV_DSS
I_D
R_{DS(on), Typ}
Qg_{, Typ}
Value
650
4
3
8.5
Unit
V
A
ȍ
nC
HFP4N65F
TO-220
HFS4N65F
TO-220F
Symbol
S
D
G
S
D
G
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
TO-220
TO-220F
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650
4.0
4.0 *
2.5
2.5 *
16
16 *
ρ30
70
4.0
11
4.5
P_D
Power Dissipation (T_C = 25୅)
- Derate above 25୅
110
35
0.88
0.28
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
* Drain current limited by maximum junction temperature
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/୅
୅
୅
Thermal Resistance Characteristics
Symbol
R_șJC
R_șCS
R_șJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
TO-220
1.15
0.5
62.5
TO-220F
3.6
--
62.5
Unit
୅/W
୅/W
୅/W
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