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HFP4N65 Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET | |||
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April 2006
HFP4N65
650V N-Channel MOSFET
BVDSS = 650 V
RDS(on) typ = 2.3 Ω
ID = 3.6 A
FEATURES
ï± Originative New Design
ï± Superior Avalanche Rugged Technology
ï± Robust Gate Oxide Technology
ï± Very Low Intrinsic Capacitances
ï± Excellent Switching Characteristics
ï± Unrivalled Gate Charge : 15 nC (Typ.)
ï± Extended Safe Operating Area
ï± Lower RDS(ON) : 2.3 Ω (Typ.) @VGS=10V
ï± 100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings TC=25â unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source Voltage
650
ID
Drain Current
â Continuous (TC = 25â)
3.6
Drain Current
â Continuous (TC = 100â)
2.3
IDM
Drain Current
â Pulsed
(Note 1)
14.4
VGS
Gate-Source Voltage
±30
EAS
Single Pulsed Avalanche Energy
(Note 2)
240
IAR
Avalanche Current
(Note 1)
3.6
EAR
Repetitive Avalanche Energy
(Note 1)
10
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25â)
- Derate above 25â
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
100
0.8
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/â
â
â
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.25
--
62.5
Units
â/W
â SEMIHOW REV.A0,April 2006
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