HFP3N90 Datasheet, PDF (1/9 Pages) SemiHow Co.,Ltd. – 900V N-Channel MOSFET

April 2017
HFP3N90 / HFS3N90
900V N-Channel MOSFET
Features
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 100% Avalanche Tested
 RoHS Compliant
Key Parameters
Parameter
BV_DSS
I_D
R_{DS(on), Typ}
Qg_{, Typ}
Value
900
3
5
17
Unit
V
A
Ω
nC
HFP3N90
TO-220
HFS3N90
TO-220F
Symbol
S
D
G
Absolute Maximum Ratings
S
D
G
T_C=25℃ unless otherwise specified
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25℃)
Drain Current
- Continuous (TC = 100℃)
Drain Current
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
TO-220
TO-220F
900
3.0
3.0 *
1.9
1.9 *
12
12 *
± 30
180
3.0
10.7
4.5
107
39
0.85
0.31
-55 to +150
300
* Drain current limited by maximum junction temperature
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
R_θJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
TO-220
1.17
0.5
62.5
TO-220F
3.2
--
62.5
Unit
℃/W
℃/W
℃/W
◎ SEMIHOW REV.A0,April 2017