HFP11N80Z Datasheet, PDF (1/10 Pages) SemiHow Co.,Ltd. – 800V N-Channel MOSFET

Oct 2016
HFP11N80Z / HFS11N80Z
800V N-Channel MOSFET
Features
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ 100% Avalanche Tested
‰ RoHS Compliant
‰ Built-in ESD Diode
Key Parameters
Parameter
BV_DSS
I_D
R_{DS(on), Typ}
Qg_{, Typ}
Value
800
11
0.78
74
Unit
V
A
ȍ
nC
HFP11N80Z
TO-220
HFS11N80Z
TO-220F
Symbol
S
D
G
S
D
G
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
TO-220
TO-220F
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
800
11
11 *
6.9
6.9 *
44
44 *
ρ30
970
11
21
4.0
P_D
Power Dissipation (T_C = 25୅)
- Derate above 25୅
210
68
1.68
0.54
V_ESD(G-S)
T_J, T_STG
T_L
Gate source ESD(HBM-C=100pF, R=1.5KŸ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
4
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
R_șJC
R_șCS
R_șJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
TO-220
0.6
0.5
62.5
TO-220F
1.84
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/୅
KV
୅
୅
Unit
୅/W
୅/W
୅/W
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