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HFP10N80 Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology | |||
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Dec 2010
HFP10N80
800V N-Channel MOSFET
BVDSS = 800 V
RDS(on) typ È
ID = 9.4 A
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 58 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) È7\S#9GS=10V
 100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25à°ÍÍ
â Continuous (TC = 100à°ÍÍ
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
800
9.4
5.9
36.0
Ïͤ͡Í
920
9.4
19.5
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25à°ÍÍ
ÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍ͵ÎΣÎÎ¥ÎÍÎÎΠΧÎÍͣͦà°Í
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
195
1.56
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/à°Í
à°Í
à°Í
Thermal Resistance Characteristics
Symbol
RÈJC
RÈCS
RÈJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.64
--
62.5
Units
à°Í ÎÍ
à°ÍÎͶ;ͺ͹ÎÎÍÎͶÎÍͲ͡Í͵ÎÎÍͣ͢͡͡Í
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