HFP10N65S Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET

Sep 2009
HFP10N65S
650V N-Channel MOSFET
BV_DSS = 650 V
R_{DS(on) typ} = 0.83 Ω
I_D = 9.2 A
FEATURES
q Originative New Design
q Superior Avalanche Rugged Technology
q Robust Gate Oxide Technology
q Very Low Intrinsic Capacitances
q Excellent Switching Characteristics
q Unrivalled Gate Charge : 29 nC (Typ.)
q Extended Safe Operating Area
q Lower R_DS(ON) : 0.83 Ω (Typ.) @V_GS=10V
q 100% Avalanche Tested
TO-220
1
23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Drain-Source Voltage
Drain Current
Drain Current
– Continuous (T_C = 25℃)
– Continuous (T_C = 100℃)
Drain Current
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation (T_C = 25℃)
- Derate above 25℃
(Note 3)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
650
9.2
5.5
36.8
±30
650
9.2
15.6
4.5
156
1.25
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.8
--
62.5
Units
℃/W
◎ SEMIHOW REV.A0,MAY 2009