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HFI50N06A Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 60V N-Channel MOSFET | |||
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Oct 2016
HFI50N06A / HFW50N06A
60V N-Channel MOSFET
Features
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 100% Avalanche Tested
 RoHS Compliant
Key Parameters
Parameter
BVDSS
ID
RDS(on), Typ
Qg, Typ
Value
60
50
18
27
HFI50N06A
TO-262
HFW50N06A
TO-263
Symbol
D
S
D
G
S
G
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
VDSS
ID
Drain-Source Voltage
Drain Current
Drain Current
â Continuous (TC = 25à
)
â Continuous (TC = 100à
)
IDM
Drain Current
â Pulsed
(Note 1)
VGS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25à
)*
PD
Power Dissipation (TC = 25à
)
- Derate above 25à
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
Value
60
50.0
30.4
200
Ï25
490
50
12
3.13
120
0.8
-55 to +175
300
Unit
V
A
PÈ
nC
Unit
V
A
A
A
V
mJ
A
mJ
W
W
W/à
à
à
Thermal Resistance Characteristics
Symbol
RÈJC
RÈJA
RÈJA
Parameter
Junction-to-Case, Max.
Junction-to-Ambient (minimum pad of 2 oz copper), Max.
Junction-to-Ambient (* 1 in2 pad of 2 oz copper), Max.
Value
1.24
62.5
40
Unit
à
/W
à
/W
à
/W
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