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HFH10N90Z Datasheet, PDF (1/10 Pages) SemiHow Co.,Ltd. – 900V N-Channel MOSFET | |||
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Oct 2016
HFH10N90Z / HFA10N90Z
900V N-Channel MOSFET
Features
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 100% Avalanche Tested
 RoHS Compliant
 Built-in ESD Diode
Key Parameters
Parameter
BVDSS
ID
RDS(on), Typ
Qg, Typ
Value
900
10
1.0
72
Unit
V
A
È
nC
HFH10N90Z
TO-3P
HFA10N90Z
TO-247
Symbol
S
D
G
S
D
G
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
TO-3P
TO-247
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25à
)
â Continuous (TC = 100à
)
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
900
10
10 *
6.3
6.3 *
40
40 *
Ï30
950
9.0
29
4.0
PD
Power Dissipation (TC = 25à
)
- Derate above 25à
290
115
2.32
0.92
VESD(G-S)
TJ, TSTG
TL
Gate source ESD(HBM-C=100pF, R=1.5KÂ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
4
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
RÈJC
RÈCS
RÈJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
TO-3P
0.43
0.24
40
TO-247
1.08
--
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/à
KV
à
à
Unit
à
/W
à
/W
à
/W
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