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HFD630 Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology | |||
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Dec 2012
HFD630 / HFU630
200V N-Channel MOSFET
BVDSS = 200 V
RDS(on) typ È
ID = 7.2 A
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 22 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) È7\S#9GS=10V
 100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD630
1
2
3
HFU630
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source Voltage
200
ID
Drain Current
â Continuous (TC = 25à°ÍÍ
7.2
Drain Current
â Continuous (TC = 100à°ÍÍ
4.6
IDM
Drain Current
â Pulsed
(Note 1)
28.8
VGS
Gate-Source Voltage
Ï30
EAS
Single Pulsed Avalanche Energy
(Note 2)
160
IAR
Avalanche Current
(Note 1)
7.2
EAR
Repetitive Avalanche Energy
(Note 1)
4.6
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25à°) *
Power Dissipation (TC = 25à´ÍÍ
ÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍ- Derate above 25à´
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
2.5
46
0.37
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/à°Í
à°Í
à°Í
Thermal Resistance Characteristics
Symbol
RÈJC
RÈJA
RÈJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.7
50
110
Units
à´:
à°ÍÎͶ;ͺ͹ÎÎÍÎͶÎÍͲ͡ÍÎÎΡÍͣͣ͢͡Í
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