HFD5N65S_15 Datasheet, PDF (1/10 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET

June 2015
HFD5N65S / HFU5N65S
650V N-Channel MOSFET
BV_DSS = 650 V
R_{DS(on) typ} ȍ
I_D = 4.0 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 10.5 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower R_DS(ON) ȍ7\S#9_GS=10V
‰ 100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD5N65S
1
2
3
HFU5N65S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
Drain-Source Voltage
650
I_D
Drain Current
– Continuous (T_C = 25ഒ)
4.0
Drain Current
– Continuous (T_C = 100ഒ͚͑
2.3
I_DM
Drain Current
– Pulsed
(Note 1)
16.0
V_GS
Gate-Source Voltage
ρ30
E_AS
Single Pulsed Avalanche Energy
(Note 2)
180
I_AR
Avalanche Current
(Note 1)
4.0
E_AR
Repetitive Avalanche Energy
(Note 1)
9.1
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
P_D
T_J, T_STG
T_L
Power Dissipation (T_A = 25ఁ) *
Power Dissipation (T_C = 25ଇ)
- Derate above 25ଇ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
91
0.73
-55 to +150
300
Units
9
$
$
$
9
P-
$
P-
9QV
:
:
:ഒ
ഒ
ഒ
Thermal Resistance Characteristics
Symbol
R_șJC
R_șJA
R_șJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.37
50
110
Units
ഒ:
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝ͻΦΟΖ͑ͣͦ͑͢͡