HFD4N50 Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 500V N-Channel MOSFET

July 2005
HFD4N50 / HFU4N50
500V N-Channel MOSFET
BV_DSS = 500 V
R_{DS(on) typ} = 2.0 Ω
I_D = 2.6 A
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 13 nC (Typ.)
 Extended Safe Operating Area
 Lower R_DS(ON) : 2.0 Ω (Typ.) @V_GS=10V
 100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD4N50
1
2
3
HFU4N50
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25℃)
– Continuous (T_C = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
2.6
1.64
10.4
±30
440
2.6
4.5
4.5
P_D
T_J, T_STG
T_L
Total Power Dissipation (T_A=25℃) *
Power Dissipation (T_C = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
45
0.36
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
Parameter
R_θJC
Junction-to-Case
R_θJA
Junction-to-Ambient*
R_θJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.78
50
110
Units
℃/W
◎ SEMIHOW REV.A0,July 2005