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HFD3N80_16 Datasheet, PDF (1/10 Pages) SemiHow Co.,Ltd. – 800V N-Channel MOSFET | |||
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Fab 2016
HFD3N80/HFU3N80
800V N-Channel MOSFET
BVDSS = 800 V
RDS(on) typ È
ID = 3.0 A
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 17 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) È7\S#9GS=10V
 100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD3N80
1
2
3
HFU3N80
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source Voltage
800
ID
Drain Current
â Continuous (TC = 25à°ÍÍ
3.0
Drain Current
â Continuous (TC = 100à°ÍÍ
1.9
IDM
Drain Current
â Pulsed
(Note 1)
12
VGS
Gate-Source Voltage
Ï30
EAS
Single Pulsed Avalanche Energy
(Note 2)
320
IAR
Avalanche Current
(Note 1)
3.0
EAR
Repetitive Avalanche Energy
(Note 1)
7.0
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25à°) *
Power Dissipation (TC = 25à°ÍÍ
ÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍ͵ÎΣÎÎ¥ÎÍÎÎΠΧÎÍͣͦà°Í
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
2.5
70
0.56
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/à°Í
à°Í
à°Í
Thermal Resistance Characteristics
Symbol
Parameter
RÈJC
Junction-to-Case
RÈJA
Junction-to-Ambient*
RÈJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.78
50
110
Units
à°Í ÎÍ
à°ÍÎͶ;ͺ͹ÎÎÍÎͶÎÍͲͥÍÍ·ÎÎÍͣͧ͢͡Í
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