HFD1N80 Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 800V N-Channel MOSFET

April 2006
HFD1N80 / HFU1N80
800V N-Channel MOSFET
BV_DSS = 800 V
R_{DS(on) typ} = 13 Ω
I_D = 1.0 A
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 7.5 nC (Typ.)
 Extended Safe Operating Area
 Lower R_DS(ON) : 13 Ω (Typ.) @V_GS=10V
 100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD1N80
1
2
3
3
HFU1N80
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings T_C=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
Drain-Source Voltage
800
I_D
Drain Current
– Continuous (T_C = 25℃)
1.0
Drain Current
– Continuous (T_C = 100℃)
0.63
I_DM
Drain Current
– Pulsed
(Note 1)
4.0
V_GS
Gate-Source Voltage
±30
E_AS
Single Pulsed Avalanche Energy
(Note 2)
90
I_AR
Avalanche Current
(Note 1)
1.0
E_AR
Repetitive Avalanche Energy
(Note 1)
4.5
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.0
P_D
T_J, T_STG
T_L
Power Dissipation (T_A = 25℃) *
Power Dissipation (T_C = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
45
0.36
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
Parameter
R_θJC
Junction-to-Case
R_θJA
Junction-to-Ambient*
R_θJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.78
50
110
Units
℃/W
◎ SEMIHOW REV.A0,April 2006