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HFD1N60F Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 600V N-Channel MOSFET | |||
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Sep 2015
HFD1N60F / HFU1N60F
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ È
ID = 1 A
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 3.7 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) È7\S#9GS=10V
 100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD1N60F
1
2
3
HFU1N60F
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25à
)
â Continuous (TC = 100à
)
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25à
)*
Power Dissipation (TC = 25à
)
- Derate above 25à
600
1.0
0.6
4.0
Ï30
33
1.0
2.8
2.5
28
0.22
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
W
W
W/à
à
à
Thermal Resistance Characteristics
Symbol
Parameter
RÈJC
Junction-to-Case
RÈJA
Junction-to-Ambient*
RÈJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
4.53
50
110
Units
à
/W
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