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HFB1N70F Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 700V N-Channel MOSFET | |||
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HFB1N70F
700V N-Channel MOSFET
Features
 Originative New Design
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 100% Avalanche Tested
 RoHS Compliant
TO-92
Oct 2016
Key Parameters
Parameter
BVDSS
ID
RDS(on), Typ
Qg, Typ
Value
700
1
10
3.7
Symbol
Unit
V
A
È
nC
S
D
G
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
VDSS
ID
Drain-Source Voltage
Drain Current
Drain Current
â Continuous (TC = 25à
)
â Continuous (TC = 100à
)
IDM
Drain Current
â Pulsed
(Note 1)
VGS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25à
)
PD
Power Dissipation (TL = 25à
)
- Derate above 25à
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
RÈJL
RÈJA
Parameter
Thermal Resistance, Junction-to-Lead, Max.
Thermal Resistance, Junction-to-Ambient, Max.
Value
700
1.0 *
0.6 *
4.0 *
Ï30
21
1.0
0.3
4.5
0.9
2.5
0.02
-55 to +150
300
Value
50
140
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/à
à
à
Unit
à
/W
à
/W
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