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HFB1N70 Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 700V N-Channel MOSFET | |||
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Jan 2007
HFB1N70
700V N-Channel MOSFET
BVDSS = 700 V
RDS(on) typ = 10.3 â¦
ID = 0.3 A
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 4.5 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) : 10.3 ⦠(Typ.) @VGS=10V
 100% Avalanche Tested
TO-92
1
2
3
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings TC=25â unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
â Continuous (TC = 25â)
â Continuous (TC = 100â)
Drain Current
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25â)
- Derate above 25â
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
700
0.3
0.18
1.2
±30
33
0.3
0.25
4.5
2.5
0.02
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/â
â
â
Thermal Resistance Characteristics
Symbol
RθJL
RθJA
Junction-to-Lead
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
50
140
Units
â/W
â SEMIHOW REV.A0,Apr 2006
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