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HFB1N65S Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology | |||
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Dec 2012
HFB1N65S
650V N-Channel MOSFET
BVDSS = 650 V
RDS(on) typ È
ID = 0.3 A
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 3.0 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) È7\S#9GS=10V
 100% Avalanche Tested
TO-92
1
2
3
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25à¬)
â Continuous (TC = 100à¬)
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650
0.3
0.18
1.2
Ï30
33
0.3
0.3
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25à¬)
Power Dissipation (TL = 25à¬)
- Derate above 25à¬
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
0.9
2.5
0.02
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/à
à
à
Thermal Resistance Characteristics
Symbol
RÈJL
RÈJA
Parameter
Junction-to-Lead
Junction-to-Ambient
Typ.
--
--
Max.
50
140
Units
à
/W
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