HFB1N60S Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 600V N-Channel MOSFET

Sep 2009
HFB1N60S
600V N-Channel MOSFET
BV_DSS = 600 V
R_{DS(on) typ} = 10 Ω
I_D = 0.3 A
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 3.0 nC (Typ.)
 Extended Safe Operating Area
 Lower R_DS(ON) : 10 Ω (Typ.) @V_GS=10V
 100% Avalanche Tested
TO-92
1
2
3
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings T_C=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25℃)
– Continuous (T_C = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
0.3
0.18
1.2
±30
33
0.3
0.3
4.5
P_D
T_J, T_STG
T_L
Power Dissipation (T_A = 25℃)
Power Dissipation (T_L = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
0.9
2.5
0.02
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
R_θJL
R_θJA
Parameter
Junction-to-Lead
Junction-to-Ambient
Typ.
--
--
Max.
50
140
Units
℃/W
◎ SEMIHOW REV.A0,Sep 2009