HFB1N60F_16 Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 600V N-Channel MOSFET

HFB1N60F
600V N-Channel MOSFET
Features
‰ Originative New Design
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ 100% Avalanche Tested
‰ RoHS Compliant
TO-92
Oct 2016
Key Parameters
Parameter
BV_DSS
I_D
R_{DS(on), Typ}
Qg_{, Typ}
Value
600
1
6.5
3.7
Symbol
Unit
V
A
ȍ
nC
S
D
G
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
V_DSS
I_D
Drain-Source Voltage
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
I_DM
Drain Current
– Pulsed
(Note 1)
V_GS
Gate-Source Voltage
E_AS
Single Pulsed Avalanche Energy
(Note 2)
I_AR
Avalanche Current
(Note 1)
E_AR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_A = 25୅)
P_D
Power Dissipation (T_L = 25୅)
- Derate above 25୅
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
R_șJL
R_șJA
Parameter
Thermal Resistance, Junction-to-Lead, Max.
Thermal Resistance, Junction-to-Ambient, Max.
Value
600
1.0 *
0.6 *
4.0 *
ρ30
33
1.0
0.3
4.5
0.9
2.5
0.02
-55 to +150
300
Value
50
140
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/୅
୅
୅
Unit
୅/W
୅/W
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