HFB1N60 Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 600V N-Channel MOSFET

Nov 2007
HFB1N60
600V N-Channel MOSFET
BV_DSS = 600 V
R_{DS(on) typ} = 9.5 Ω
I_D = 0.4 A
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 4.0 nC (Typ.)
 Extended Safe Operating Area
 Lower R_DS(ON) : 9.5 Ω (Typ.) @V_GS=10V
 100% Avalanche Tested
TO-92
1
2
3
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings T_C=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
Drain-Source Voltage
600
I_D
Drain Current
– Continuous (T_C = 25℃)
0.4
Drain Current
– Continuous (T_C = 100℃)
0.25
I_DM
Drain Current
– Pulsed
(Note 1)
1.6
V_GS
Gate-Source Voltage
±30
E_AS
Single Pulsed Avalanche Energy
(Note 2)
50
I_AR
Avalanche Current
(Note 1)
0.4
E_AR
Repetitive Avalanche Energy
(Note 1)
0.3
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
P_D
T_J, T_STG
T_L
Power Dissipation (T_A = 25℃)
Power Dissipation (T_C = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
1.0
3.0
0.02
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
R_θJL
R_θJA
Junction-to-Lead
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
40
120
Units
℃/W
◎ SEMIHOW REV.A0,Nov 2007