HDS20U30GW Datasheet, PDF (1/3 Pages) SemiHow Co.,Ltd. – High Breakdown Voltage

HDS20U30GW
Ultra Fast Recovery Diode
General Description
With excellent performance in reverse recovery time, switching speed and
rated current, HDS20U30GW can be utilized with high voltage power
switches for voltage limitation and high-frequency current rectification.
Features
 High Breakdown Voltage
 High Speed Switching
May 2015
V_RRM = 300 V
I_F = 2 x 10A
t_rr = 21nS
TO-220F
12 ₃
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_RRM
V_R
Peak Repetitive Reverse Voltage
DC Blocking Voltage
I_F(AV) Average Rectifier Forward Current
(Per Diode)
(Total Diode)
I_FSM
T_J, T_STG
Non-Rectifier Peak Surge Current @8.3ms (Per Diode)
Operating and Storage Temperature Range
Value
300
10
20
100
-55 to +150
Electrical Characteristics (Per Diode)
Symbol
V_BR
V_F
I_R
Parameter
Breakdown Voltage
Forward Voltage
Reverse Current
t_rr
Reverse Recovery Time
Test Conditions
Min
I_R = 50uA
300
I_F = 10A, T_C = 25℃
--
V_R = 300V, T_C = 25℃
--
I_F = 1A, di/dt = 200A/μs
--
I_F = 10A, di/dt = 200A/μs --
Typ
--
1.05
--
21
34
Max
--
1.2
10
--
--
Thermal Resistance Characteristics
Symbol
Parameter
R_θJC
Junction-to-Case (Per Diode)
Typ.
--
Max.
3.6
Unit
V
A
A
℃
Unit
V
V
uA
ns
ns
Unit
℃/W
◎ SEMIHOW REV.A2,.May 2015