HDS20U20AW Datasheet, PDF (1/3 Pages) SemiHow Co.,Ltd. – Low forward drop voltage

August 2015
HDS20U20AW
Ultra Fast Recovery Diode
General Description
The HDS20U20AW is ideally as boost diode in discontinuous or critical
mode power factor corrections.
The planar structure and the platinum doper life time control guarantee the
best overall performance, ruggedness reliability characteristics. The device
is also intended for use as a freewheeling diode in power supplies and
other power switching applications.
Features
‰ Low forward drop voltage
‰ Dual common cathode rectifier construction
‰ Ultrafast recovery time and high speed switching
V_RRM = 200 V
I_F = 2 x 10A
t_rr = 19nS
TO-220F
12 ₃
1
23
Pin 1, 3 : Anode
Pin 2 : Cathode
Absolute Maximum Ratings T_A=25πC unless otherwise noted
Symbol
Parameter
V_RRM
V_R
Peak Repetitive Reverse Voltage
DC Blocking Voltage
I_F(AV) Average Rectifier Forward Current
(Per Diode)
(Total Diode)
I_FSM
T_J, T_STG
Non-Rectifier Peak Surge Current @8.3ms (Per Diode)
Operating and Storage Temperature Range
Value
200
10
20
130
-45 to +150
Electrical Characteristics (Per Diode)
Symbol
Parameter
V_F
Forward Voltage
I_R
Reverse Current
t_rr
Reverse Recovery Time
C_j
Junction Capacitance
Test Conditions
I_F = 10A, T_J = 25୅
V_R = 200V, T_J = 25୅
V_R = 200V, T_J = 125୅
I_F $GLGW $ȝV
V_R = 10V, f=1MHz
Thermal Resistance Characteristics
Symbol
Parameter
R_șJC Junction-to-Case (Per Diode)
Min
Typ
Max
--
0.93 0.98
--
--
5
--
--
200
--
19
25
--
60
--
Typ.
--
Max.
4.0
Unit
V
A
A
୅
Unit
V
uA
ns
pF
Unit
୅/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͟͡͝ͲΦΘΦΤΥ͑ͣͦ͑͢͡