HDS20A03X Datasheet, PDF (1/3 Pages) SemiHow Co.,Ltd. – SwitchmodeFull Plastic Dual Schottky Barrier Power Rectifiers

JAN 2010
HDS20A03x Thru HDS20A06x
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
FEATURES
• Low Forward Voltage.
• Low Switching noise.
• High Current Capacity
• Guarantee Reverse Avalanche.
• Guard-Ring for Stress Protection.
• Low Power Loss & High efficiency.
• 125℃ Operating Junction Temperature
• Low Stored Charge Majority Carrier Conduction.
• Plastic Material used Carries Underwriters Laboratory
30-60 VOLTS
20 AMPERES
ITO-220AB
123
Maximum Ratings
Symbol
Parameter
V_RRM
V_RWM
V_R
V_R(RMS)
I_F(AV)
I_FM
I_FSM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
R.M.S Reverse Voltage
Average Rectifier Forward Current
- Total Device (Rated V_R), T_C=100℃
Peak Repetitive Forward Current
(Rate V_R, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current (Surge applied at
rate load conditions half ware, single phase, 60Hz)
T_J, T_STG
Operating and Storage Temperature Range
Electrial Characteristics
Symbol
V_F
I_R
Parameter
Maximum Instantaneous Forward Voltage
- ( IF =10 Amp TC = 25℃)
- ( IF =10 Amp TC = 100℃)
Maximum Instantaneous Reverse Current
- ( Rated DC Voltage, TC = 25℃)
- ( Rated DC Voltage, TC = 125℃)
Value
03 035 04 045 05 06
30 35 40 45 50 60
21 25 28 32 35 42
10
20
20
200
-65 to +125
Value
03 035 04 045 05 06
0.55
0.65
0.48
0.57
1.0
30
Units
V
V
A
A
A
A
℃
Units
V
mA
◎ SEMIHOW REV.A0,Nov 2010