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HDPE10U60G Datasheet, PDF (1/3 Pages) SemiHow Co.,Ltd. – High breakdown voltage
May 2015
HDPE10U60G
Ultra Fast Recovery Diode
General Description
With excellent performance in reverse recovery time, switching speed and
rated current, HDPE10U60G can be utilized with high voltage power
switches for voltage limitation and high-frequency current rectification.
Features
 High breakdown voltage
 High speed switching
 Avalanche Energy Rated
 Planar Construction
Applications
 LED Power & Other Charger SMPS
 PFC
 General Purpose
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VRRM
VR
IF(AV)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectifier Forward Current (TC=125℃)
IFSM
Non-Rectifier Peak Surge Current @8.3ms
TJ, TSTG Operating and Storage Temperature Range
VRRM = 600 V
IF = 10 A
trr(Typ) = 27 nS
TO-220-2L
C
A
Cathode
Anode
Value
Unit
600
V
10
A
100
A
-55 to +150
℃
Electrical Characteristics
Symbol
Parameter
VBR
Breakdown Voltage
VF
Forward Voltage
IR
Reverse Current
trr
Reverse Recovery Time
Test Conditions
Min
Typ
Max
Unit
IR = 50uA
600
--
--
V
IF = 10A, TC = 25℃
--
1.3
1.55
V
IF = 10A, TC = 125℃
--
1.2
1.45
VR = 600V, TC = 25℃
--
--
10
uA
IF = 1A, di/dt = 200A/μs
--
27
--
ns
IF = 10A, di/dt = 200A/μs --
52
--
ns
Thermal Resistance Characteristics
Symbol
RθJC
Junction-to-Case
Parameter
Typ.
--
Max.
1.8
Unit
℃/W
◎ SEMIHOW REV.A1,.May 2015