HDP10A20 Datasheet, PDF (1/3 Pages) SemiHow Co.,Ltd. – Plastic Material used Carries Underwriters Laboratory

JAN 2010
HDP10A20
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Refractory metal capable of high
temperature operation metal. The proprietary barrier technology allows for
reliable operation up to 175℃ junction temperature. Typical application are in
switching Mode Power Supplies such as adaptors, DC/DC converters,
free- wheeling and polarity protection diodes.
FEATURES
 Low Forward Voltage.
 Low Switching noise.
 High Current Capacity
 Guarantee Reverse Avalanche.
 Guard-Ring for Stress Protection.
 Low Power Loss & High efficiency.
 175℃ Operating Junction Temperature
 Low Stored Charge Majority Carrier Conduction.
 Plastic Material used Carries Underwriters Laboratory
 Flammability Classification 94V-O
 ESD: 4KV(Min.) Human-Body Model
 In compliance with EU RoHs 2002/95/EC directives
200 VOLTS
10 AMPERES
TO-220AB
1
2
3
Common cathode
Suffix “C”
Maximum Ratings
Symbol
V_RRM
V_RWM
V_R
V_R(RMS)
I_F(AV)
I_FM
I_FSM
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
R.M.S Reverse Voltage
Average Rectifier Forward Current
- Total Device (Rated V_R), T_C=125℃
Peak Repetitive Forward Current
(Rate V_R, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current (Surge applied at
rate load conditions half ware, single phase, 60Hz)
T_J, T_STG
Operating and Storage Temperature Range
Electrial Characteristics
Symbol
V_F
Parameter
Maximum Instantaneous Forward Voltage
- ( IF =5.0 Amp TC = 25℃)
- ( IF =5.0 Amp TC = 125℃)
Maximum Instantaneous Reverse Current
I_R
- ( Rated DC Voltage, TC = 25℃)
- ( Rated DC Voltage, TC = 125℃)
Thermal Resistance Characteristics
Symbol
R_θJC
Junction-to-Case
Parameter
Value
200
140
5.0
10
10
125
-65 to +175
Units
V
V
A
A
A
A
℃
Value
0.95
0.85
0.01
10
Units
V
mA
Typ.
--
Max.
4.2
Units
℃/W
◎ SEMIHOW REV.A0,Nov 2010