HDP10A03X Datasheet, PDF (1/3 Pages) SemiHow Co.,Ltd. – Schottky Barrier Rectifiers

JAN 2010
HDP10A03x Thru HDP10A06x
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
30-60 VOLTS
10 AMPERES
TO-220AB
FEATURES
 Low Forward Voltage.
 Low Switching noise.
 High Current Capacity
 Guarantee Reverse Avalanche.
 Guard-Ring for Stress Protection.
 Low Power Loss & High efficiency.
 150℃ Operating Junction Temperature
 Low Stored Charge Majority Carrier Conduction.
 Plastic Material used Carries Underwriters Laboratory
 Flammability Classification 94V-O
 ESD: 8KV(Min.) Human-Body Model
 In compliance with EU RoHs 2002/95/EC directives
Maximum Ratings
Symbol
Parameter
V_RRM
V_RWM
V_R
V_R(RMS)
I_F(AV)
I_FM
I_FSM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
R.M.S Reverse Voltage
Average Rectifier Forward Current
- Total Device (Rated V_R), T_C=125℃
Peak Repetitive Forward Current
(Rate V_R, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current (Surge applied at
rate load conditions half ware, single phase, 60Hz)
T_J, T_STG
Operating and Storage Temperature Range
Electrial Characteristics
Symbol
Parameter
Maximum Instantaneous Forward Voltage
V_F
- ( IF =5.0 Amp TC = 25℃)
- ( IF =5.0 Amp TC = 100℃)
Maximum Instantaneous Reverse Current
I_R
- ( Rated DC Voltage, TC = 25℃)
- ( Rated DC Voltage, TC = 125℃)
Thermal Resistance Characteristics
Symbol
R_θJC
Junction-to-Case
Parameter
1
2
3
Value
03 035 04 045 05 06
Units
30 35 40 45 50 60
V
21 25 28 32 35 42
V
5.0
A
10
A
10
A
125
A
-65 to +150
℃
Value
03 035 04 045 05 06
0.55
0.65
0.47
0.55
0.5
20
Units
V
mA
Typ.
--
Max.
4.2
Units
℃/W
◎ SEMIHOW REV.A0,Nov 2010