HDAE75F60G Datasheet, PDF (1/3 Pages) SemiHow Co.,Ltd. – High Breakdown Voltage

HDAE75F60G
Fast Recovery Diode
General Description
With excellent performance in reverse recovery time, switching speed and
rated current, HDAE75F60G can be utilized with high voltage power
switches for voltage limitation and high-frequency current rectification.
Features
 High Breakdown Voltage
 High Speed Switching
Dec 2015
V_RRM = 600 V
I_F = 75A
t_rr = 43nS
TO-247-2L
C
A
Cathode
Anode
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
Value
Unit
V_RRM
V_R
I_F(AV)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectifier Forward Current
600
V
75
A
I_FSM
Non-Rectifier Peak Surge Current @8.3ms
750
A
T_J, T_STG Operating and Storage Temperature Range
-55 to +150
℃
Electrical Characteristics
Symbol
V_BR
V_F
I_R
t_rr
Parameter
Breakdown Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Test Conditions
Min
Typ
Max
Unit
I_R = 50uA
600
--
--
V
I_F = 75A, T_C = 25℃
--
1.2
1.5
V
V_R = 600V, T_C = 25℃
--
--
50
uA
I_F = 1A, di/dt = 200A/μs
--
43
--
ns
Thermal Resistance Characteristics
Symbol
Parameter
R_θJC
Junction-to-Case
Typ.
--
Max.
0.6
Unit
℃/W
◎ SEMIHOW REV.A1,.Dec 2015