HDAE30U60G Datasheet, PDF (1/3 Pages) SemiHow Co.,Ltd. – Ultrafast Recovery Time

HDAE30U60G
Ultra Fast Recovery Diode
General Description
With excellent performance in reverse recovery time, switching speed and
rated current, HDAE30U60G can be utilized with high voltage power
switches for voltage limitation and high-frequency current rectification.
Features
 Ultrafast Recovery Time
 Low Forward Voltage
 Low Stored Charge
Mar 2016
V_RRM = 600 V
I_F = 30 A
t_rr(Typ) = 33 nS
TO-247-2L
C
A
Cathode
Anode
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
Value
Unit
V_RRM
V_R
I_F(AV)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectifier Forward Current
600
V
30
A
I_FSM
Non-Rectifier Peak Surge Current @8.3ms
300
A
T_J, T_STG Operating and Storage Temperature Range
-55 to +150
℃
Electrical Characteristics
Symbol
V_BR
V_F
I_R
Parameter
Breakdown Voltage
Forward Voltage
Reverse Current
t_rr
Reverse Recovery Time
Test Conditions
Min
Typ
Max
Unit
I_R = 50uA
600
--
--
V
I_F = 30A, T_C = 25℃
--
1.25
1.5
V
V_R = 600V, T_C = 25℃
--
--
10
uA
I_F = 1A, di/dt = 200A/μs
--
33
--
ns
I_F = 30A, di/dt = 200A/μs --
60
--
ns
Thermal Resistance Characteristics
Symbol
Parameter
R_θJC
Junction-to-Case
Typ.
--
Max.
1.0
Unit
℃/W
◎ SEMIHOW REV.A0,.Mar 2016