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| HDA80U40GW Datasheet, PDF (1/3 Pages) SemiHow Co.,Ltd. – High Breakdown Voltage | |||
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HDA80U40GW
Ultra Fast Recovery Diode
General Description
With excellent performance in reverse recovery time, switching speed and
rated current, HDA80U40GW can be utilized with high voltage power
switches for voltage limitation and high-frequency current rectification.
Features
ï± High Breakdown Voltage
ï± High Speed Switching
July 2015
VRRM = 400 V
IF = 2 x 40A
trr = 33nS
TO-247
123
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Unit
VRRM
VR
Peak Repetitive Reverse Voltage
DC Blocking Voltage
400
V
IF(AV) Average Rectifier Forward Current
(Per Diode)
(Total Diode)
40
80
A
IFSM
Non-Rectifier Peak Surge Current @8.3ms (Per Diode)
300
A
TJ, TSTG Operating and Storage Temperature Range
-55 to +150
â
Electrical Characteristics (Per Diode)
Symbol
VBR
VF
IR
trr
Parameter
Breakdown Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Test Conditions
Min
Typ
Max
Unit
IR = 50uA
400
--
--
V
IF = 40A, TC = 25â
--
1.2
1.4
V
VR = 400V, TC = 25â
--
--
10
uA
IF = 1A, di/dt = 200A/μs
--
33
--
ns
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
Junction-to-Case (Per Diode)
Typ.
--
Max.
1.0
Unit
â/W
â SEMIHOW REV.A2,.July 2015
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