HDA60U60GW Datasheet, PDF (1/3 Pages) SemiHow Co.,Ltd. – High Breakdown Voltage

HDA60U60GW
Ultra Fast Recovery Diode
General Description
With excellent performance in reverse recovery time, switching speed and
rated current, HDA60U60GW can be utilized with high voltage power
switches for voltage limitation and high-frequency current rectification.
Features
 High Breakdown Voltage
 High Speed Switching
May 2015
V_RRM = 600 V
I_F = 2 x 30A
t_rr = 33nS
TO-247
123
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
Value
Unit
V_RRM
V_R
Peak Repetitive Reverse Voltage
DC Blocking Voltage
600
V
I_F(AV) Average Rectifier Forward Current
(Per Diode)
(Total Diode)
30
60
A
I_FSM
Non-Rectifier Peak Surge Current @8.3ms (Per Diode)
300
A
T_J, T_STG Operating and Storage Temperature Range
-55 to +150
℃
Electrical Characteristics (Per Diode)
Symbol
V_BR
V_F
I_R
Parameter
Breakdown Voltage
Forward Voltage
Reverse Current
t_rr
Reverse Recovery Time
Test Conditions
Min
I_R = 50uA
600
I_F = 30A, T_C = 25℃
--
V_R = 600V, T_C = 25℃
--
I_F = 1A, di/dt = 200A/μs
--
I_F = 30A, di/dt = 200A/μs --
Typ
--
1.25
--
33
60
Max
--
1.5
10
--
--
Thermal Resistance Characteristics
Symbol
Parameter
R_θJC
Junction-to-Case (Per Diode)
Typ.
--
Max.
1.0
Unit
V
V
uA
ns
ns
Unit
℃/W
◎ SEMIHOW REV.A1,.May 2015