English
Language : 

HDA40U20GW Datasheet, PDF (1/3 Pages) SemiHow Co.,Ltd. – Ultra Fast Recovery Diode
HDA40U20GW
Ultra Fast Recovery Diode
General Description
With excellent performance in reverse recovery time, switching speed and
rated current, HDA40U20GW can be utilized with high voltage power
switches for voltage limitation and high-frequency current rectification.
Features
 High Breakdown Voltage
 High Speed Switching
May 2015
VRRM = 200 V
IF = 2 x 20A
trr = 20nS
TO-247
123
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VRRM
VR
Peak Repetitive Reverse Voltage
DC Blocking Voltage
IF(AV) Average Rectifier Forward Current
(Per Diode)
(Total Diode)
IFSM
TJ, TSTG
Non-Rectifier Peak Surge Current @8.3ms (Per Diode)
Operating and Storage Temperature Range
Value
200
20
40
200
-55 to +150
Electrical Characteristics (Per Diode)
Symbol
VBR
VF
IR
Parameter
Breakdown Voltage
Forward Voltage
Reverse Current
trr
Reverse Recovery Time
Test Conditions
Min
IR = 50uA
200
IF = 20A, TC = 25℃
--
VR = 200V, TC = 25℃
--
IF = 1A, di/dt = 200A/μs
--
IF = 20A, di/dt = 200A/μs --
Typ
--
0.95
--
20
26
Max
--
1.05
10
--
--
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
Junction-to-Case (Per Diode)
Typ.
--
Max.
1.0
Unit
V
A
A
℃
Unit
V
V
uA
ns
ns
Unit
℃/W
◎ SEMIHOW REV.A2,.May 2015