HCU70R1K4P Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

HCU70R1K4P
700V N-Channel Super Junction MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 7.5 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower R_DS(ON) : 1.15 ȍ(Typ.) @V_GS=10V
‰ 100% Avalanche Tested
Jan 2015
BV_DSS = 700 V
R_DS(on)Typ ȍ
I_D = 4.0 A
I-PAK
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
700
4.0
2.8
12.0
ρ30
130
2.0
0.2
50
P_D
T_J, T_STG
T_L
Power Dissipation (T_C = 25୅)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
21
-55 to +150
260
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
୅
୅
Thermal Resistance Characteristics
Symbol
R_șJC
R_șJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
6.0
110
Units
୅/W
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