HCU65R660S Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 650V N-Channel Super Junction MOSFET

June 2015
HCD65R660S / HCU65R660S
650V N-Channel Super Junction MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 14 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower R_DS(ON) ȍ7\S#9_GS=10V
‰ 100% Avalanche Tested
BV_DSS = 650 V
R_{DS(on) typ} = 0.6 ȍ
I_D = 6.2 A
D-PAK I-PAK
2
1
1
3
2
3
HCD65R660S HCU65R660S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
650
6.2
3.5
18
ρ20
120
2
1
15
Power Dissipation (T_A = 25୅)*
2.5
P_D
Power Dissipation (T_C = 25୅)
63
- Derate above 25୅
0.5
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/୅
୅
୅
Thermal Resistance Characteristics
Symbol
Parameter
R_șJC
R_șJA
Junction-to-Case
Junction-to-Ambient*
R_șJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.0
50
110
Units
୅/W
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