HCS55R140E Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – Extremely low switching loss

April 2016
HCS55R140E
550V N-Channel Super Junction MOSFET
Features
‰ Very Low FOM (R_DS(on) X Q_g)
‰ Extremely low switching loss
‰ Excellent stability and uniformity
‰ 100% Avalanche Tested
Key Parameters
Parameter
BV_DSS @T_j,max
I_D
R_{DS(on), max}
Qg_{, Typ}
Value
600
23
0.14
22
Unit
V
A
ȍ
nC
Application
‰ Lighting
‰ Hard Switching PWM
‰ Server Power Supply
‰ Charger
Package & Internal Circuit
TO-220F
G
D
S
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
V_GS
I_D
I_DM
E_AS
dv/dt
dv/dt
P_D
T_J, T_STG
T_L
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
MOSFET dv/dt ruggedness, V_DS=0…400V
Reverse diode dv/dt, V_DS=0…400V, I_DS”I_D
Power Dissipation
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
550
ρ30
23.0 *
14.5 *
69.0 *
570
50
15
34
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
R_șJC
R_șJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.67
62.5
Units
V
V
A
A
A
mJ
V/ns
V/ns
W
୅
୅
Units
୅/W
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