HCP20NT60V Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 600V N-Channel Super Junction MOSFET

Jan 2014
HCP20NT60V
600V N-Channel Super Junction MOSFET
BV_DSS = 600 V
R_{DS(on) typ} = 0.17 ȍ
I_D = 20 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 54 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower R_DS(ON) : 0.17 ȍ7\S#9_GS=10V
‰ 100% Avalanche Tested
‰ RoHS Compliant
TO-220
1
23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
20
12.5
60
ρ20
500
20
1
4.5
P_D
Power Dissipation (T_C = 25୅)
- Derate above 25୅
208
0.67
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/୅
୅
୅
Thermal Resistance Characteristics
Symbol
R_șJC
R_șJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
0.6
62
Units
୅/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣͥ͑͢͡