HCD70R700T Datasheet, PDF (1/9 Pages) SemiHow Co.,Ltd. – Extremely low switching loss

Dec 2015
HCD70R700T / HCU70R700T
700V N-Channel Super Junction MOSFET
Features
‰ Very Low FOM (R_DS(on) X Q_g)
‰ Extremely low switching loss
‰ Excellent stability and uniformity
‰ 100% Avalanche Tested
Key Parameters
Parameter
BV_DSS @T_j,max
I_D
R_{DS(on), max}
Qg_{, Typ}
Value
750
6
0.7
14
Unit
V
A
ȍ
nC
Application
‰ Switch Mode Power Supply (SMPS)
‰ Uninterruptible Power Supply (UPS)
‰ Power Factor Correction (PFC)
‰ TV power & LED Lighting Power
Package & Internal Circuit
D-PAK
(HCD70R700T)
D
I-PAK
(HCU70R700T)
G
S
G
D
S
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
V_GS
I_D
I_DM
E_AS
P_D
T_J, T_STG
T_L
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation (T_A = 25୅) *
Power Dissipation (T_C = 25୅)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
700
ρ30
6.0
3.8
18
155
2.5
50
-55 to +150
300
Units
V
V
A
A
A
mJ
W
W
୅
୅
Thermal Resistance Characteristics
Symbol
Parameter
R_șJC
R_șJA
Junction-to-Case
Junction-to-Ambient *
R_șJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.5
50
110
Units
୅/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͣ͝͵ΖΔ͑ͣͦ͑͢͡