2N3811L Datasheet, PDF (3/3 Pages) Semicoa Semiconductor – Silicon PNP Transistor

Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Magnitude – Common Emitter, Short
|h_FE1|
V_CE = 5 Volts, I_C = 500 µA,
f = 30 MHz
1
Circuit Forward Current Transfer Ratio
|h_FE2|
V_CE = 5 Volts, I_C = 1 mA,
f = 100 MHz
1
Small Signal Short Circuit Forward
Current Transfer Ratio
h_FE
V_CE = 10 Volts, I_C = 1 mA,
f = 1 kHz
300
Open Circuit Output Capacitance
C_OBO
V_CB = 5 Volts, I_E = 0 mA,
100 kHZ < f < 1 MHz
Open Circuit Input Capacitance
C_IBO
V_EB = 0.5 Volts, I_C = 0 mA,
100 kHZ < f < 1 MHz
Noise Figure
V_CE = 10 Volts, I_C = 100 µA,
R_g = 3 kΩ
NF₁ f = 100 Hz
NF₂ f = 1 kHz
NF₃ f = 10 kHz
Noise Figure (wideband)
V_CE = 10 Volts, I_C = 100 µA,
NF
R_g = 3 kΩ
10 Hz < f < 15.7 kHz
Short Circuit Input Impedance
h_ie
V_CB =10V, I_C =1mA, f =1kHz
3
Open Circuit Output Admittance
h_oe V_CB =10V, I_C =1mA, f =1kHz
5
Open Circuit reverse Voltage Transfer
Ratio
h_re
V_CB =10V, I_C=100µA, f=1kHz
2N3811L
Silicon PNP Transistor
Data Sheet
Typ
Max Units
5
900
5
pF
8
pF
4
dB
1.5
2
2.5
dB
40
kΩ
60
µΩ
25x10^-4
Copyright 2002
Rev. G
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX [phone]
www.SEMICOA.com
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