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JAN2N3507 Datasheet, PDF (2/2 Pages) Semicoa Semiconductor – Screening and processing per MIL-PRF-19500
◁
2N3507
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
On Characteristics
Parameter
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Delay Time
Rise Time
Switching Characteristics
Storage Time
Fall Time
Symbol
Test Conditions
Min
Typ
Max Units
V(BR)CBO IC = 100 µA
80
Volts
V(BR)CEO IC = 10 mA
50
Volts
V(BR)EBO IE = 10 µA
5
Volts
ICEX1 VCE = 60 Volts, VEB = 4 Volts
1
µA
ICEX2
VCE = 60 Volts, VEB = 4 Volts,
TA = 150°C
1.5
mA
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Symbol
Test Conditions
Min
Typ
Max Units
hFE1 IC = 500 mA, VCE = 1 Volts
35
hFE2 IC = 1.5 A, VCE = 2 Volts
30
hFE3 IC = 2.5 A, VCE = 3 Volts
25
hFE4 IC = 3.0 A, VCE = 5 Volts
20
hFE5 IC = 500 mA, VCE = 1 Volts
17
TA = -55°C
VBEsat1 IC = 500 mA, IB = 50 mA
VBEsat2 IC = 1.5 A, IB = 150 mA
VBEsat3 IC = 2.5 A, IB = 250 mA
VCEsat1 IC = 500 mA, IB = 50 mA
VCEsat2 IC = 1.5 A, IB = 150 mA
0.8
VCEsat3 IC = 2.5 A, IB = 250 mA
175
150
0.5
1.0
Volts
1.5
1.0
1.3
Volts
2.0
Symbol
Test Conditions
Min
Typ
Max Units
|hFE|
VCE = 5 Volts, IC = 100 mA,
f = 20 MHz
3
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
CIBO
VEB = 3 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
td
IC = 1.5 A, IB1 = 150 mA
15
40
pF
300
pF
15
ns
tr
IC = 1.5 A, IB1 = 150 mA
30
ns
ts
IC = 1.5 A, IB1=IB2 = 150 mA
tf
IC = 1.5 A, IB1=IB2 = 150 mA
55
ns
35
ns
Copyright 2010
Rev. E
SEMICOA Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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